FDS6990A
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
2000
I
D
= 7.5A
V
DS
= 10V
15V
1600
20V
CAPACITANCE (pF)
f = 1 MHz
V
GS
= 0 V
8
6
1200
C
iss
800
4
C
oss
400
2
C
rss
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
100µs
40
I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
SINGLE PULSE
R
θJA
= 135°C/W
T
A
= 25°C
30
1
10s
DC
V
GS
= 10.0V
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25
o
C
20
0.1
10
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6990A Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
