FDS6986S
Typical Characteristics Q1
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 6.5A
8
CAPACITANCE (pF)
15V
6
V
DS
= 5V
10V
1000
f = 1MHz
V
GS
= 0 V
800
C
ISS
600
4
400
2
200
C
RSS
C
OSS
0
0
3
6
Q
g
, GATE CHARGE (nC)
9
12
0
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
100µs
I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
100ms
1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25 C
0.01
0.01
o
Figure 18. Capacitance Characteristics.
50
SINGLE PULSE
R
θJA
= 135°C/W
T
A
= 25°C
1ms
10ms
1s
10s
DC
40
30
20
0.1
10
0.1
1
10
100
0
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 135 °C/W
P(pk)
0.02
0.01
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6986S Rev C1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
