Electrical Characteristics
Symbol
Parameter
(continued)
T
A
= 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Ω
Q2
V
DS
= 15 V, I
D
= 11.5 A, V
GS
= 5 V
Q1
V
DS
= 15 V, I
D
= 6.3 A, V
GS
= 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q2
Q1
10
10
10
14
34
21
14
7
17.5
8.5
6.3
2.4
5.4
3.1
18
18
18
25
55
34
23
14
25
12
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
t
RR
Q
RR
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time
I
F
= 11.5A,
d
iF
/d
t
= 300 A/µs
3.0
1.3
20
19.7
0.42
0.56
0.70
.7
1.2
A
ns
nC
V
Reverse Recovery Charge
Drain-Source Diode Forward V
GS
= 0 V, I
S
= 3 A
V
GS
= 0 V, I
S
= 6 A
Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 3)
(Note 2)
(Note 2)
(Note 2)
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78°/W when
mounted on a
2
0.5 in pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6982S Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
