Typical Characteristics Q1
20
2.6
2.2
1.8
1.4
1
VGS = 10V
6.0V
4.0V
3.5V
VGS = 3.0V
16
12
8
4.5V
3.5V
4.0V
4.5V
3.0V
6.0V
10V
4
0.6
0
0
5
10
ID, DRAIN CURRENT (A)
15
20
0
1
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.1
ID = 6.3A
VGS = 10V
ID = 3.15 A
0.08
0.06
0.04
0.02
0
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
VGS = 0V
VDS = 5V
10
1
15
10
5
TA = 125oC
25oC
0.1
TA = 125oC
-55oC
-55oC
0.01
0.001
0.0001
25oC
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6982AS Rev B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
