FDS6982AS
Typical Characteristics: Q2
30
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
3.0V
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
V
GS
= 2.5V
I
D
, DRAIN CURRENT (A)
4.5V
3.5V
20
3.0V
3.5V
4.0V
10
2.5V
4.5V
6.0V
10V
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2
10
20
I
D
, DRAIN CURRENT (A)
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
R
DS(ON)
, ON-RESISTANCE (OHM)
1.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 8.6A
V
GS
= 10V
1.2
I
D
= 4.3 A
0.04
0.03
T
A
= 125 C
0.02
o
1
0.8
0.01
T
A
= 25 C
o
0.6
-50
-25
0
25
50
75
o
T
J
, JUNCTION TEMPERATURE ( C)
100
125
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
30
V
DS
= 5V
25
I
D
, DRAIN CURRENT (A)
20
15
10
5
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
1
T
A
= 125 C
25 C
o
o
T
A
= 125 C
-55
o
C
o
0.1
-55
o
C
25
o
C
0.01
0
0.2
0.4
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6982AS Rev
B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
