Typical Electrical Characteristics (continued)
3000
2000
10
ID= -6A
VDS
=
-5V
C
iss
8
6
4
2
0
-10V
1000
500
-15V
C
oss
C
rss
200
100
f = 1 MHz
VGS
=
0 V
0.1
0.2
0.5
1
2
5
10
20 30
0
6
12
18
24
30
- V
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
DS
g
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
10
30
25
20
15
10
5
SINGLE PULSE
R JA =135°C/W
q
A
T
= 25°C
3
0.5
VGS = -10V
SINGLE PULSE
R JA =135°C/W
0.05
0.01
q
A
T
= 25°C
0
0.01
0.1
0.3
1
2
5
10
30 50
0.1
0.5
10
50 100
300
- V
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t) = r(t) * R
JA
JA
q
q
R
= 135°C/W
JA
q
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t1
t2
Single Pulse
0.005
T - T = P * R
(t)
JA
q
J
A
0.002
0.001
Duty Cycle, D = t1 /t2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6975 Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
