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FDS6961A 参数 Datasheet PDF下载

FDS6961A图片预览
型号: FDS6961A
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道逻辑电平MOSFET PowerTrenchTM [Dual N-Channel Logic Level PowerTrenchTM MOSFET]
分类和应用: 晶体小信号场效应晶体管开关光电二极管PC
文件页数/大小: 8 页 / 242 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Electrical Characteristics
15
I
D
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
2.5
12
R
DS(ON)
, NORMALIZED
V
GS
= 10V
6.0V
4.5V
2
V
GS
= 3.5V
4.0 V
9
4.0V
6
1.5
4.5 V
5.0V
6.0V
10V
3.5V
1
3
3.0V
0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0
3
6
9
12
15
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.3
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
1.4
I
D
= 3.5A
V
GS
= 10V
I
D
= 3.5A
0.24
1.2
0.18
125°C
0.12
1
0.8
0.06
25°C
0.6
-50
0
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
Temperature.
with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
8
10
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
=5.0V
I
D
, DRAIN CURRENT (A)
6
T
J
= -55°C
25°C
125°C
V
GS
= 0V
1
T
J
= 125°C
25°C
4
0.1
-55°C
0.01
2
0
1
V
2
GS
3
4
5
0.001
0.2
0.4
0.6
0.8
1
1.2
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6961A Rev.C