FDS6961AZ
September 2001
FDS6961AZ
Dual N-Channel Logic Level PowerTrench
®
MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•
3.5 A, 30 V.
R
DS(ON)
= 90 mΩ @ V
GS
= 10 V
R
DS(ON)
= 140 mΩ @ V
GS
= 4.5 V
•
Low gate charge (2.1 nC typical)
•
ESD protection diode (note 3)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
5
6
7
Q2
Q1
4
3
2
1
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
3.5
14
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
–55 to +150
°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6961AZ
©2001
Fairchild Semiconductor Corporation
Device
FDS6961AZ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS6961AZ Rev C (W)