FDS6961AZ
Typical Characteristics
14
V
GS
= 10V
12
I
D
, DRAIN CURRENT (A)
10
8
6
4
2
0
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0V
3.5V
4.0V
6.0V 4.5V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
2
V
GS
= 3.5V
1.8
1.6
4.0V
1.4
4.5V
5.0V
1.2
1
6.0V
10V
0.8
0
2
4
6
8
10
12
14
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.23
R
DS(ON)
ON-RESISTANCE (OHM)
,
1.8
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
I
D
= 3.5A
V
GS
= 10V
I
D
= 1.8A
0.2
0.17
0.14
T
A
= 125
o
C
0.11
0.08
0.05
T
A
= 25
o
C
2
4
6
8
10
0.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
12
10
I
D
, DRAIN CURRENT (A)
125
o
C
8
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
T
A
= -55
o
C
25
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
1
0.1
0.01
0.001
T
A
= 125
o
C
6
4
25
o
C
-55
o
C
2
0
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6961AZ Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
