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FDS6912A 参数 Datasheet PDF下载

FDS6912A图片预览
型号: FDS6912A
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道逻辑电平, PowerTrenchTM MOSFET [Dual N-Channel, Logic Level, PowerTrenchTM MOSFET]
分类和应用: 晶体晶体管开关光电二极管PC
文件页数/大小: 4 页 / 225 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Electrical Characteristics
40
I
D
, DRAIN-SOURCE CURRENT (A)
5
24
3.5V
R
DS(ON)
, NORMALIZED
32
5.5V
4.5V
4.0V
DRAIN-SOURCE ON-RESISTANCE
V
GS
=10V
4
V
GS
= 2.5V
3
3.0 V
2
16
3.0V
8
3.5 V
4.5 V
10V
1
2.5V
0
0
1
2
3
4
0
0
6
12
18
24
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
0.15
1.4
I
D
= 6A
V
GS
= 10V
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 3A
0.12
R
DS(ON)
, NORMALIZED
1.2
0.09
1
0.06
T
A
= 125°C
0.03
0.8
25°C
0
0
2
4
6
8
10
0.6
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
Temperature.
with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
25
20
V
DS
=5.0V
I
D
, DRAIN CURRENT (A)
20
I
S
, REVERSE DRAIN CURRENT (A)
T
J
= -55°C
25°C
125°C
V
GS
= 0V
TJ = 125°C
25°C
0.1
1
15
10
-55°C
0.01
5
0
0.001
1
2
3
4
5
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6912A Rev.C