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FDS6875 参数 Datasheet PDF下载

FDS6875图片预览
型号: FDS6875
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道2.5V指定PowerTrenchTM MOSFET [Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
文件页数/大小: 8 页 / 196 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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November 1998
FDS6875
Dual P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These P-Channel
2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored to
minimize the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging and protection circuits.
Features
-6 A, -20 V. R
DS(ON)
= 0.030
@ V
GS
= -4.5 V,
R
DS(ON)
= 0.040
@ V
GS
= -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
4
3
2
1
S
FD 75
68
G1
S2
G2
6
7
8
SO-8
pin
1
S1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless otherwise noted
FDS6875
-20
±8
(Note 1a)
Units
V
V
A
-6
-20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
°C
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
FDS6875 Rev.C
© 1998 Fairchild Semiconductor Corporation