O
Electrical Characteristics (TA = 25 C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-20
V
ID = -250 µA, Referenced to 25 oC
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
-21
DBVDSS/DTJ
-1
µA
µA
nA
nA
IDSS
VDS = -16 V, VGS = 0 V
-10
TJ = 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
-0.4
-20
-0.8
2.8
-1.5
V
mV/oC
Gate Threshold Voltage Temp. Coefficient
DVGS(th)/DTJ
Static Drain-Source On-Resistance
0.024
0.033
0.032
0.03
0.048
0.04
RDS(ON)
VGS = -4.5 V, ID = -6 A
W
TJ =125°C
VGS = -2.5 V, ID = -5.3 A
VGS = -4.5 V, VDS = -5 V
VDS = -4.5 V, ID = -6 A
ID(ON)
gFS
On-State Drain Current
A
S
Forward Transconductance
22
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
2250
500
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
200
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
8
16
27
ns
ns
tD(on)
tr
tD(off)
tf
VDS= -10 V, ID = -1 A
15
VGEN = -4.5 V, RGEN = 6 W
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
98
35
135
55
ns
ns
Qg
Qgs
Qgd
VDS = -10 V, ID = -6 A,
VGS = -5 V
23
31
nC
nC
nC
3.9
5.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2)
-1.3
-1.2
A
V
IS
VSD
-0.7
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% .
FDS6875 Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
