FDS6694
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 12A
8
15V
6
CAPACITANCE (pF)
V
DS
= 5V
10V
2000
f = 1MHz
V
GS
= 0 V
1600
C
ISS
1200
4
800
C
OSS
400
C
RSS
2
0
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
100µs
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
1s
1
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
=
0.01
0.01
25
o
C
1ms
10ms
100ms
50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
30
20
0.1
10
0.1
1
10
100
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJ
A
(t) = r(t) + R
θJ
A
R
θJ
A
= 125 °C/W
P(pk)
0.02
0.01
0.1
0.1
0.05
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJ
A
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6694 Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
