FDS6986S
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 uA
I
D
= 1 mA, Referenced to 25°C
I
D
= 250 µA, Referenced to 25°C
V
DS
= 24 V, V
GS
= 0 V
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
30
20
23
500
1
100
–100
V
mV/°C
µA
NA
nA
Off Characteristics
V
GS
= 20 V, V
DS
= 0 V
V
GS
= 16 V, V
DS
= 0 V
Gate-Body Leakage, Reverse V
GS
= –20 V, V
DS
= 0 V
V
GS
= –16 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 1 mA, Referenced to 25°C
I
D
= 250 uA, Referenced to 25°C
V
GS
= 10 V, I
D
= 7.9 A
V
GS
= 10 V, I
D
= 7.9 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 6.5 A
V
GS
= 10 V, I
D
= 6.5 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 7.9 A
V
DS
= 5 V, I
D
= 6.5 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
1
1
2.4
1.6
–6
–4
16
24
23
25
37
30
3
3
V
mV/°C
Q1
20
32
28
29
49
38
mΩ
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
20
23
22
1233
695
344
117
106
58
1.4
1.7
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 15mV, f = 1.0 MHz
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Ω
Q2:
V
DS
= 15 V, I
D
= 7.9 A, V
GS
= 5 V
Q1:
V
DS
= 15 V, I
D
= 6.5 A, V
GS
= 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
8
7
5
4.5
25
20
11
2.5
11
6.5
5
2.5
4
1.3
16
14
10
9
40
36
20
5
16
9
ns
ns
ns
ns
nC
nC
nC
FDS6986S Rev C1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
