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FDS6690AF011 参数 Datasheet PDF下载

FDS6690AF011图片预览
型号: FDS6690AF011
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 8 页 / 271 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Electrical Characteristics
50
I
D
, DRAIN-SOURCE CURRENT (A)
3
DRAIN-SOURCE ON-RESISTANCE
V
GS
=10V
6.0V
4.5V
4.0V
3.5V
R
DS(ON)
, NORMALIZED
40
2.5
V
GS
= 3.0V
2
30
3.0V
20
3.5 V
1.5
4.0 V
4.5 V
5.5 V
7.0 V
10V
0
10
20
30
40
50
10
2.5V
0
0
0.5
V
DS
1
1
1.5
2
2.5
3
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
0.05
R
DS(ON)
, NORMALIZED
1.4
I
D
= 11A
V
GS
= 10V
I
D
= 5.5A
0.04
1.2
0.03
1
0.02
T
A
= 125°C
0.8
0.01
T
A
= 25°C
0
2
4
6
8
10
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
Temperature.
with
Figure 4. On Resistance Variation with
Gate-to-Source Voltage.
V
DS
=5.0V
I
D
, DRAIN CURRENT (A)
30
I
S
, REVERSE DRAIN CURRENT (A)
40
40
V
GS
= 0V
10
T
J
= -55°C
125°C
25°C
T
J
= 125°C
1
25°C
0.1
20
-55°C
10
0.01
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6690A Rev.D