FDS6690A
February
2007
FDS6690A
Single N-Channel, Logic-Level, PowerTrench
®
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
tm
Features
•
11 A, 30 V.
R
DS(ON)
= 12.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 17.0 mΩ @ V
GS
= 4.5 V
•
Fast switching speed
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
D
D
SO-8
D
D
D
D
D
D
5
6
4
3
2
1
Pin 1
SO-8
G
S
G
S
S
S
S
S
T
A
=25
o
C unless otherwise noted
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
E
AS
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
mJ
°C
11
50
2.5
1.0
96
–55 to +150
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
(Note 1a)
(Note 1b)
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS6690A
©2007
Fairchild Semiconductor Corporation
Device
FDS6690A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS6690A Rev E1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
