FDS6688S
Typical Characteristics
(continued)
10
5000
I
D
= 16.0A
V
DS
= 10V
4000
f = 1MHz
V
GS
= 0 V
20V
V
GS
, GATE-SOURCE VOLTAGE (V)
8
CAPACITANCE (pF)
6
3000
15V
C
iss
4
2000
C
oss
1000
C
rss
2
0
0
10
20
30
40
Q
g
, GATE CHARGE (nC)
50
60
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
100us
1ms
10ms
100ms
1s
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
40
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
30
1
10s
DC
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 125 C/W
T
A
= 25
o
C
20
0.1
10
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 125 °C/W
0.1
0.1
0.05
0.02
P(pk
0.01
0.01
t
1
t
2
T
J
- T
C
= P * R
θJC
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6688S Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
