FDS6688S
Typical Characteristics
50
2.6
V
GS
= 10V
3.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
1
V
GS
= 2.5V
40
I
D
, DRAIN CURRENT (A)
4.5V
3.5V
30
2.5V
20
3.0V
3.5V
4.0V
10
4.5V
6.0V
10V
0
0
0.25
0.5
0.75
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.0V
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 16.0A
V
GS
=10V
I
D
= 8.0A
0.014
0.012
0.01
0.008
0.006
1.4
1.2
1
T
A
= 125
o
C
0.8
T
A
= 25
o
C
0.6
-50
-25
0
25
50
75
o
T
J
, JUNCTION TEMPERATURE ( C)
100
125
0.004
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
DS
= 5V
40
I
D
, DRAIN CURRENT (A)
I
S
, REVERSE DRAIN CURRENT (A)
10
V
GS
= 0V
30
1
T
A
= 125
o
C
25
o
C
T
A
= 125
o
C
20
25
o
C
10
0.1
-55 C
o
0.01
-55 C
o
0
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
0.001
0
0.2
0.4
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6688S Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
