FDS6682
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
30
Typ
Max Units
V
Off Characteristics
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
= 16 V,
V
GS
= –16 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= 250
µA
1
1.7
–5.6
5.7
6.6
8
50
70
2310
582
237
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
10
7
44
16
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 14 A,
22
6.4
8
2.1
(Note 2)
23
10
100
–100
3
mV/°C
µA
nA
nA
V
mV/°C
7.5
9
11.5
mΩ
A
S
pF
pF
pF
20
14
70
29
31
ns
ns
ns
ns
nC
nC
nC
A
V
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 14 A
V
GS
= 4.5 V, I
D
= 12.5 A
V
GS
= 4.5 V, I
D
= 12.5 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 14 A
Dynamic Characteristics
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 2.1 A
Voltage
0.7
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6682 Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
