FDS6682
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
30
Typ Max
Units
V
Off Characteristics
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
= 16 V,
V
GS
= 0 V
V
DS
= 0 V
23
10
100
–100
mV/°C
µA
nA
nA
V
GS
= –16 V, V
DS
= 0 V
I
D
= 250
µA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
1
1.7
–5.6
5.7
6.6
8
3
V
mV/°C
I
D
= 250
µA,
Referenced to 25°C
V
GS
V
GS
V
GS
V
GS
= 10 V,
I
D
= 14 A
= 4.5 V, I
D
= 12.5 A
= 4.5 V, I
D
= 12.5 A, T
J
=125°C
= 10 V, V
DS
= 5 V
I
D
= 14 A
7.5
9
11.5
mΩ
I
D(on)
g
FS
50
70
A
S
V
DS
= 10 V,
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
2310
582
237
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
10
7
44
16
20
14
70
29
31
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 14 A,
22
6.4
8
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 2.1 A
Voltage
2.1
(Note 2)
A
V
0.7
1.2
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6682 Rev B(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
