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FDS6680S 参数 Datasheet PDF下载

FDS6680S图片预览
型号: FDS6680S
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道的PowerTrench SyncFET⑩ [30V N-Channel PowerTrench SyncFET⑩]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 9 页 / 223 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS6680S
February 2000
PRELIMINARY
FDS6680S
30V N-Channel PowerTrench
SyncFET
General Description
The FDS6680S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDS6680 in parallel with a Schottky diode.
Features
11.5 A, 30 V.
R
DS(ON)
= 0.011
@ V
GS
= 10 V
R
DS(ON)
= 0.016
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
Applications
DC/DC converter
Motor drives
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
11.5
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6680S
2000
Fairchild Semiconductor Corporation
Device
FDS6680S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS6680S Rev B (W)