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FDS6680AF011 参数 Datasheet PDF下载

FDS6680AF011图片预览
型号: FDS6680AF011
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 8 页 / 271 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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October 2001
FDS6680A
Single N-Channel, Logic Level, PowerTrench
®
MOSFET
GeneralDescription
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
12.5 A, 30 V. R
DS(ON)
= 0.0095
@ V
GS
= 10 V
R
DS(ON)
= 0.013
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for
extremely low R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
D
D
D
5
4
3
2
1
S
FD 0A
8
66
pin
1
6
7
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless other wise noted
FDS6680A
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
30
±20
12.5
50
2.5
1.2
1
-55 to 150
V
V
A
W
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
© 2001 Fairchild Semiconductor Corporation
FDS6680A Rev.E