July 1998
FDS6670A
Single N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
13 A, 30 V. R
DS(ON)
= 0.008
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.010
Ω
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge (35 nC tyical).
High performance trench technology for
extremely low R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless other wise noted
FDS6670A
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
30
±20
13
50
2.5
1.2
1
-55 to 150
V
V
A
W
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDS6670A Rev.D1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
