FDS6670AS
30V N-Channel PowerTrench
®
SyncFET™
Electrical Characteristics
Symbol
V
SD
t
rr
Q
rr
Notes: 1.
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Test Conditions
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 13.5A,
d
iF
/d
t
= 300 A/µs
Min
Typ
0.5
0.6
20
15
Max Units
0.7
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
(Note 2)
(Note 2)
(Note 3)
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6670AS Rev A2 (X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
