FDS6670A
Typical Characteristics
50
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
3.5V
40
I
D
, DRAIN CURRENT (A)
1.6
V
GS
= 3.5V
1.4
4.5V
30
4.0V
20
1.2
4.0V
4.5V
5.0V
3.0V
10
1
10V
0
0
0.5
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1.5
0.8
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13A
V
GS
= 10V
1.4
I
D
= 6.5A
0.02
1.2
0.015
T
A
= 125
o
C
0.01
T
A
= 25
o
C
0.005
1
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
40
I
D
, DRAIN CURRENT (A)
V
GS
= 0V
10
T
A
= 125
o
C
1
30
T
A
=125
o
C
20
25
o
C
-55
o
C
10
0.1
25
o
C
-55
o
C
0.01
0.001
0
2
2.25
2.5
2.75
3
3.25
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670A Rev F (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
