Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
ID = 250 mA
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
26
mV/°C
IDSS
Zero Gate Voltage Drain Current
1
mA
mA
nA
10
VDS = 24 V, VGS = 0 V, TJ=55°C
VGS = ±20 V, VDS = 0 V
IGSS
Gate–Body Leakage
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.9
3
V
VDS = VGS
,
ID = 250 mA
DVGS(th)
DTJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 mA, Referenced to 25°C
–4.4
mV/°C
mW
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
ID = 8.4 A
ID = 7.2 A
19
24
25
22
30
37
VGS= 10 V, ID = 8.4 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 15 V,
VDS = 5 V
ID = 8.4 A
20
A
S
Forward Transconductance
30
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
560
140
55
pF
pF
pF
W
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
2.5
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
7
5
14
10
35
6
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 W
22
3
ns
ns
Qg
Qgs
Qgd
5.4
1.7
1.9
7.6
nC
nC
nC
VDS = 15 V,
VGS = 5 V
ID = 8.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V,
IS = 2.1 A (Note 2)
0.77
Voltage
trr
Diode Reverse Recovery Time
19
9
nS
nC
IF = 8.4 A, diF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDS6612A Rev D (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
