FDS6612A
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 8.4A
8
V
DS
= 10V
20V
6
15V
4
CAPACITANCE (pF)
800
f = 1 MHz
V
GS
= 0 V
600
C
iss
400
C
oss
200
2
C
rss
0
0
2
4
6
8
Q
g
, GATE CHARGE (nC)
10
12
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
30
Figure 7. Gate Charge Characteristics.
100
100µs
R
DS(ON)
LIMIT
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
10
1ms
10ms
100ms
1s
10s
DC
40
SINGLE PULSE
o
R
θJA
= 125 C/W
T
A
= 25
o
C
30
1
20
0.1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25 C
o
10
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 C/W
P(pk)
t
1
t
2
SINGLE PULSE
o
0.1
0.1
0.05
0.02
0.01
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6612A Rev D (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
