®
®
®
FDS6612A Single N-Channel, Logic-Level, PowerTrench
®
MOSFET
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min Typ
30
26
Max
Units
V
mV/°C
Off Characteristics
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
DS
= V
GS
,
V
GS
= 0 V
V
DS
= 0 V
I
D
= 250
µA
1
1.9
–4.4
19
24
25
20
30
560
140
55
V
GS
= 15 mV, f = 1.0 MHz
(Note 2)
1
10
±100
3
µA
µA
nA
V
mV/°C
V
DS
= 24 V, V
GS
= 0 V, T
J
=55°C
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 8.4 A
V
GS
= 4.5 V,
I
D
= 7.2 A
V
GS
= 10 V, I
D
= 8.4 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 15 V,
V
DS
= 15 V,
f = 1.0 MHz
V
DS
= 5 V
I
D
= 8.4 A
V
GS
= 0 V,
22
30
37
mΩ
I
D(on)
g
FS
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
Notes:
A
S
pF
pF
pF
Ω
14
10
35
6
7.6
ns
ns
ns
ns
nC
nC
nC
2.1
0.77
19
9
1.2
A
V
nS
nC
Dynamic Characteristics
2.5
7
5
22
3
Switching Characteristics
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 8.4 A,
5.4
1.7
1.9
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
Voltage
Diode Reverse Recovery Time
I
F
= 8.4 A, d
iF
/d
t
= 100 A/µs
Diode Reverse Recovery Charge
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user' board design.
s
a)
50°C/W when mounted
on a 1in
2
pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2
Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3
Starting TJ = 25°C, L = 1mH, I
AS
= 7A, V
DD
= 27V, V
GS
= 10V
FDS6612A Rev D1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
