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FDS6575L86Z 参数 Datasheet PDF下载

FDS6575L86Z图片预览
型号: FDS6575L86Z
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 8 页 / 243 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Characteristics  
50  
2.2  
2
VGS = -4.5V  
-2.5V  
-3.0V  
40  
VGS = - 1.5V  
-2.0V  
-1.5V  
1.8  
1.6  
1.4  
1.2  
1
30  
20  
10  
0
-2.0V  
-2.5V  
-3.0V  
-3.5V  
-4.5V  
0.8  
0
0.5  
1
1.5  
2
175  
2
0
10  
20  
30  
40  
50  
-VDS , DRAIN TO SOURCE VOLTAGE (V)  
-ID, DRAIN CURRENT (A)  
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation with  
Drain Current and Gate Voltage.  
1.6  
1.4  
1.2  
1
0.035  
ID = -10A  
VGS = - 4.5V  
ID = -5A  
0.03  
0.025  
0.02  
TA = 125oC  
0.015  
0.01  
0.8  
0.6  
TA = 25oC  
0.005  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. On-Resistance Variation with  
Temperature.  
Figure 4. On-Resistance Variation with  
Gate-to-Source Voltage.  
10  
50  
40  
30  
20  
10  
0
VGS = 0V  
25oC  
125oC  
VDS = -5V  
TA = -55oC  
1
TA = 125oC  
0.1  
25oC  
0.01  
-55oC  
0.001  
0.0001  
0
0.5  
1
1.5  
0
0.2  
0.4  
0.6  
0.8  
-VGS, GATE TO SOURCE VOLTAGE (V)  
-VSD , BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics.  
Figure 6. Body Diode Forward Voltage Variation  
with Source Current and Temperature.  
FDS6575 Rev F(W)