FDS6294
Typical Characteristics
60
50
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
6.0V
4.0V
4.5V
2.2
3.5.V
2
1.8
1.6
1.4
1.2
1
0.8
4.0V
4.5V
5.0V
6.0V
10V
V
GS
= 3.5V
40
30
20
10
0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
3.0V
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.028
R
DS(ON)
, ON-RESISTANCE (OHM)
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
-50
I
D
= 13A
V
GS
= 10V
I
D
= 13A
0.024
0.02
0.016
T
A
= 125 C
0.012
0.008
0.004
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
o
T
A
= 25 C
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
o
Figure 3. On-Resistance Variation with
Temperature.
70
60
I
D
, DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
25
o
C
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
T
A
= -55 C
125
C
o
o
10
1
0.1
0.01
0.001
0.0001
V
GS
= 0V
T
A
= 125 C
25 C
-55 C
o
o
o
50
40
30
20
10
0
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6294 Rev D1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
