FDS4953
May 2002
FDS4953
Dual 30V P-Channel PowerTrench
®
MOSFET
General Description
This P
-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Features
•
–5 A, –30 V
R
DS(ON)
= 55 mΩ @ V
GS
= –10 V
R
DS(ON)
= 95 mΩ @ V
GS
= –4.5 V
•
Low gate charge (6nC typical)
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
Power management
•
Load switch
•
Battery protection
D2
D
D1
D
D2
D
D
D1
5
6
7
G1
S1
G
G2
S
S2
S
Q1
4
3
2
Q2
SO-8
Pin 1
SO-8
8
1
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–30
±20
(Note 1a)
Units
V
V
A
–5
–20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
–55 to +175
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS4953
©2002
Fairchild Semiconductor Corporation
Device
FDS4953
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS4953 Rev D1(W)