Typical Characteristics: Q1
10
900
800
700
600
500
400
300
200
100
0
ID = 4.5A
VDS = 10V
f = 1MHz
VGS = 0 V
20V
8
6
4
2
0
30V
CISS
COSS
CRSS
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
40
30
20
10
0
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
RDS(ON) LIMIT
100µs
10
1m
10ms
100ms
1s
1
DC
VGS= 10V
SINGLE PULSE
RθJA= 135oC/W
TA= 25oC
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
RθJA = 135°C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
T
J - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4559 Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
