FDS4559
October 2000
FDS4559
60V Complementary PowerTrench
MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Features
•
Q1: N-Channel
4.5 A, 60 V
R
DS(on)
= 0.055Ω
=
@ V
GS
= 10V
R
DS(on)
= 0.075Ω
=
@ V
GS
= 4.5V
•
Q2: P-Channel
–3.5 A, –60 V
R
DS(on)
= 0.105Ω
=
@ V
GS
= –10V
R
DS(on)
= 0.135Ω
=
@ V
GS
= –4.5V
Applications
•
DC/DC converter
•
Power management
•
LCD backlight inverter
D1
D
D1
D
D2
D
D
D2
5
6
Q2
4
3
Q1
SO-8
Pin 1
SO-8
G1
S1
S
G2
S2
G
7
8
2
1
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25°C unless otherwise noted
Parameter
Q1
60
(Note 1a)
Q2
–60
±20
–3.5
–20
2
1.6
1.2
1
-55 to +175
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain Current
±20
4.5
20
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS4559
Device
FDS4559
Reel Size
13”
Tape width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
FDS4559 Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
