Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source VDD = 30 V,
ID = 4.5 A
Q1
Q1
90
mJ
A
Avalanche Energy
Maximum Drain-Source
Avalanche Current
4.5
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
GS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
Q1
Q2
Q1
Q2
60
–60
V
mV/°C
µA
Voltage
V
Breakdown Voltage
Temperature Coefficient
58
–49
∆BVDSS
∆TJ
IDSS
Zero Gate Voltage Drain
Current
Q1
Q2
Q1
Q2
1
–1
+100
+100
V
DS = –48 V, VGS = 0 V
VGS = +20 V, VDS = 0 V
GS = +20 V, VDS = 0 V
IGSS
Gate-Body Leakage
nA
V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
DS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
Q1
Q2
Q1
Q2
1
–1
2.2
–1.6
–5.5
4
3
–3
V
V
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
mV/°C
mΩ
RDS(on)
Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 4.5 A
VGS = 10 V, ID = 4.5 A, TJ = 125°C
GS = 4.5 V, ID = 4 A
Q1
42
72
55
55
94
75
V
Q2
VGS = –10 V, ID = –3.5 A
VGS = –10 V, ID = –3.5 A, TJ = 125°C
82
130
105
105
190
135
V
GS = –4.5 V, ID = –3.1 A
VGS = 10 V, VDS = 5 V
GS = –10 V, VDS = –5 V
Forward Transconductance VDS = 10 V, ID = 4.5 A
DS = –5 V, ID = –3 5 A
ID(on)
gFS
On-State Drain Current
Q1
Q2
Q1
Q2
20
–20
A
S
V
14
9
V
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
650
759
80
90
35
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
f = 1.0 MHz
Q2
Output Capacitance
V
DS = –30 V, VGS = 0 V,
Reverse Transfer
Capacitance
f = 1.0 MHz
39
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11
7
8
20
14
18
20
35
34
15
22
18
21
ns
ns
V
DD = 30 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
10
19
19
6
12
12.5
15
2.4
2.5
2.6
3.0
Q2
ns
V
DD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
ns
Qg
Qgs
Qgd
Q1
nC
nC
nC
V
DS = 30 V, ID = 4.5 A, VGS = 10 V
Q2
DS = –30 V, ID = –3.5 A, VGS = –10V
V
FDS4559_F085 Rev A (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
