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FDS4435A 参数 Datasheet PDF下载

FDS4435A图片预览
型号: FDS4435A
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道逻辑电平的PowerTrench ? MOSFET [P-Channel Logic Level PowerTrench?MOSFET]
分类和应用:
文件页数/大小: 5 页 / 171 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS4435A
October 2001
FDS4435A
P-Channel Logic Level PowerTrench
®
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for notebook computer appli-
cations: load switching and power management, battery
charging circuits, and DC/DC conversion.
Features
•
•
•
•
-9 A, -30 V. R
DS(ON)
= 0.017
W
@ V
GS
= -10 V
R
DS(ON)
= 0.025
W
@ V
GS
= -4.5 V
Low gate charge (21nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
-30
±
20
(Note 1a)
Units
V
V
A
W
-9
-50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS4435A
Device
FDS4435A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
ã2001
Fairchild Semiconductor Corporation
FDS4435A Rev.
D