FDS4435BZ
July 2005
FDS4435BZ
30 Volt P-Channel PowerTrench
®
MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
®
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
•
–8.8 A, –30 V. R
DS(ON)
= 20 mΩ @ V
GS
= –10 V
R
DS(ON)
= 35 mΩ @ V
GS
= – 4.5 V
•
Extended V
GSS
range (–25V) for battery applications
•
HBM ESD protection level of ±4.5 kV typical (note 3)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
•
Termination is Lead-free and RoHS compliant
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–30
±25
(Note 1a)
Units
V
V
A
W
–8.8
–50
2.5
1.2
1.0
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS4435BZ
Device
FDS4435BZ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2005
Fairchild Semiconductor Corporation
FDS4435BZ Rev B (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
