FDS4435A
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= -250
µA
I
D
= -250
µA,Referenced
to 25°C
V
DS
= -24 V, V
GS
= 0
T
J
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
Min
-30
Typ
Max
Units
V
-26
-1
-10
100
-100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= -250
µA
I
D
= -250
µA,Referenced
to 25°C
V
GS
= -10 V, I
D
= -9 A
T
J
= 125°C
V
GS
= -4.5 V, I
D
= -7 A
-1
-1.7
4.2
0.015
0.021
0.023
-2
V
mV/°C
0.017
0.030
0.025
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -9 A
-40
25
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -15 V, V
GS
= 0 V
f = 1.0 MHz
2010
590
260
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -15 V, I
D
= -1 A
V
GS
= -10 V, R
GEN
= 6
Ω
12
15
100
55
22
27
140
80
30
ns
ns
ns
ns
nC
nC
nC
V
DS
= -15 V, I
D
= -9 A
V
GS
= -5 V,
21
6
8
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Source-Drain Reverse Recovery Time
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-2.1
0.75
36
-1.2
80
A
V
ns
I
F
= -10 A, dl
F
/dt = 100 A/µS
Notes:
1:
R
qJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
qJC
is guaranteed by design while R
qCA
is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125° C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
FDS4435A Rev.
D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
