FDS4435
October 2001
FDS4435
30V P-Channel PowerTrench
®
MOSFET
General Description
This P
-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Features
•
–8.8 A, –30 V
R
DS(ON)
= 20 mΩ @ V
GS
= –10 V
R
DS(ON)
= 35 mΩ @ V
GS
= –4.5 V
•
Low gate charge (17nC typical)
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
Power management
•
Load switch
•
Battery protection
D
D
SO-8
DD
DD
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S G
S S
S S
S
T
A
=25
o
C unless otherwise noted
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
–30
±25
(Note 1a)
Units
V
V
A
W
–8.8
–50
2.5
1.2
1
–55 to +175
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS4435
©2001
Fairchild Semiconductor Corporation
Device
FDS4435
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS4435 Rev F1(W)