FDS4435
Typical Characteristics
W
Ã
@
B
6
U
G
P
W
Ã
@
8
S
V
P
T
@
U
6
B
Ã
W
(continued)
!$
D Ã2Ã''6
'
W
'6
Ã2Ã$W
W
sÃ2Ã ÃHC
W
!
A
Ã
@ $
8
I
6
U
D
8
6
Q
6
8
$
8
*6
Ã2ÃÃW
'
$W
8
%
,66
#
6
*
!
266
566
!
!$
"
8
$
$
!
!$
"
"$
$
W
$
R
J
ÃB6U@Ã8C6SB@Ã8
'6
Ã9S6DIÃUPÃTPVS8@ÃWPGU6B@ÃW
Figure 7. Gate-Charge Characteristics.
S
ÃGDHDU
6
Ã
U
I
@
S
S
V
8
Ã
I
D
6
S
9
Ã
D
Figure 8. Capacitance Characteristics.
$
98
W
*6
Ã2Ã W
TDIBG@ÃQVGT@
S
θ
-$
Ã2Ã !$ 8X
U
$
Ã2Ã!$ 8
R
R
µ
TDIBG@ÃQVGT@
S
θ
#
-$
Ã2Ã
$
!$ 8X
R
U Ã2Ã!$ 8
R
"
X
Ã
S
@
X
P!
Q
'
W
'6
Ã9S6DITPVS8@ÃWPGU6B@ÃW
TDIBG@ÃQVGT@ÃUDH@ÃT@8
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
@
@
W
D
U
8
@
A
A
@
Ã
Ã
9
@
a
D
G
6
H
S
P
I
Ã
8
$
I
6
U
T
D
!
T
@
S
Ã
Ã
G
6
$
H
Ã
S
@
!
C
U
Ã
Ã
U
I
@
Ã
D $
T
I
6
S !
U
Ã9Ã2 Ã Ã
$
ÃÃ ÃÃ
!
Ã
Ã
à $ Ã
ÃÃÃ
S
θ
E 6
ÃÃÃÃÃÃÃÃ2Ã
ÃÃÃÃS
E 6
ÃÃÃÃÃÃÃÃÃ
θ
ÃÃÃS
ÃÃÃÃÃÃÃÃ Ã
2
θ
E 6
!$8 Ã
X
Q x
à ! Ã
Ã
Ã
ÃÃÃ
ÃÃÃÃ
ÃTÃÃ Ã Ã t Ãy r ÃÃQÃ Ã Ã
v
Ã
Ãy Ãr
UÃÃÃUÃÃÃ2ÃQÃÃ ÃS
Ã
ÃÃÃÃÃÃ
E
6
6
θ
E Ã
9
ÃÃÃÃ
ÃÃÃ8 Ãp Ãy ÃrÃ9
Ã
Ã
Ã2ÃÃÃÃ
à ÃÃUD à @à à Ãp
Ã
H
r
"
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS4435 Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
