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FDS4435BZ_07 参数 Datasheet PDF下载

FDS4435BZ_07图片预览
型号: FDS4435BZ_07
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道MOSFET PowerTrench㈢ -30V , -8.8A ,20Mヘ [P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20mヘ]
分类和应用:
文件页数/大小: 6 页 / 301 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS4435BZ P-Channel PowerTrench
®
MOSFET
June 2007
FDS4435BZ
P-Channel PowerTrench
®
MOSFET
-30V, -8.8A, 20mΩ
Features
Max r
DS(on)
= 20mΩ at V
GS
= -10V, I
D
= -8.8A
Max r
DS(on)
= 35mΩ at V
GS
= -4.5V, I
D
= -6.7A
Extended V
GSS
range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
General Description
This
P-Channel
MOSFET
is
produced
using
Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
D
G
S
Pin 1
SO-8
S
S
D
D
6
7
8
3
2
1
S
S
S
D
5
4
G
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
E
AS
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
T
A
= 25°C
T
A
= 25°C
(Note 1a)
(Note 1b)
(Note 4)
T
A
= 25°C
(Note 1a)
Parameter
Ratings
-30
±25
-8.8
-50
2.5
1.0
24
-55 to +150
Units
V
V
A
W
mJ
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
25
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS4435BZ
Device
FDS4435BZ
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
1
www.fairchildsemi.com