FDS4435BZ P-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
100
V
GS
= -10V
P
(PK)
, PEAK TRANSIENT POWER (W)
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150
–
T
A
------------------------
125
10
T
A
= 25
o
C
1
0.6
-3
10
SINGLE PULSE
R
θ
JA
= 125
o
C/W
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
SINGLE PULSE
R
θ
JA
= 125
o
C/W
0.01
-3
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
5
www.fairchildsemi.com