FDS3672
Typical Characteristics
T
A
= 25°C unless otherwise noted
300
100
10µs
10
I
AS
, AVALANCHE CURRENT (A)
8
6
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
100µs
10
4
T
J
= 100
o
C
1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
10ms
100ms
2
0.1
T
J
= 125
o
C
1s
300
0.01
0.1
1.0
10.0
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
30
V
GS
= 10V
V
GS
= 6V
V
GS
= 5V
I
D
, DRAIN CURRENT (A)
20
T
J
=
150
o
C
20
10
T
J
= 25
o
C
10
T
A
= 25
o
C
V
GS
= 4.5V
T
J
= -55
o
C
0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
5.5
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 7. Transfer Characteristics
24
DRAIN TO SOURCE ON RESISTANCE (m
Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 6V
22
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
Figure 8. Saturation Characteristics
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
20
V
GS
= 10V
1.0
V
GS
= 10V, I
D
= 7.5A
18
0
2
4
I
D
, DRAIN CURRENT (A)
6
8
0.5
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
