FDN5618P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
===∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
DS
= –48 V,
V
GS
= 20V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–60
Typ
Max Units
V
Off Characteristics
–58
–1
100
–100
–1
–1.6
4
0.148
0.185
0.245
–5
4.3
430
52
19
6.5
8
16.5
4
V
DS
= –30 V,
V
GS
= –10 V
I
D
= –1.25 A,
8.6
1.5
1.3
–0.42
–1.2
13
16
30
8
13.8
0.170
0.230
0.315
–3
mV/°C
µA
nA
nA
V
mV/°C
Ω
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
GS
= –10 V,
I
D
= –1.25 A
V
GS
= –4.5 V,
I
D
= –1.0 A
V
GS
= –10 V, I
D
= –3 A T
J
=125°C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –1.25 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Dynamic Characteristics
V
DS
= –30 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –30 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –0.42
Voltage
(Note 2)
–0.7
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤=300 µs,
Duty Cycle
≤=2.0
FDN5618P Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
