FDN360P
May 2003
FDN360P
Single P-Channel, PowerTrench
®
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•
–2 A, –30 V.
R
DS(ON)
= 80 mΩ @ V
GS
= –10 V
R
DS(ON)
= 125 mΩ @ V
GS
= –4.5 V
•
Low gate charge (6.2 nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
.
•
High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
–30
±20
(Note 1a)
Units
V
V
A
–2
–10
0.5
0.46
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
W
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
360
Device
FDN360P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2003
Fairchild Semiconductor Corporation
FDN360P Rev F1 (W)