FDN358P
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -1.5A
8
CAPACITANCE (pF)
-15V
6
V
DS
= -5V
-10V
250
C
ISS
200
f = 1 MHz
V
GS
= 0 V
150
4
100
C
OSS
50
C
RSS
2
0
0
1
2
Q
g
, GATE CHARGE (nC)
3
4
0
0
5
10
15
20
25
30
-V
D S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10
10ms
-I
D
, DRAIN CURRENT (A)
100ms
1
1s
10s
DC
0.1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
1ms
20
Figure 8. Capacitance Characteristics.
SINGLE PULSE
R
θ
JA
= 270°C/W
T
A
= 25°C
15
10
5
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) + R
θJA
R
θ
JA
= 270 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN358P Rev E1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
