FDN358P
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
250
I
D
= -1.5A
V
DS
= -5V
-10V
C
ISS
200
CAPACITANCE (pF)
f = 1 MHz
V
GS
= 0 V
8
-15V
6
150
4
100
C
OSS
2
50
C
RSS
0
0
1
2
Q
g
, GATE CHARGE (nC)
3
4
0
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10
1ms
10ms
-I
D
, DRAIN CURRENT (A)
100ms
1
1s
10s
DC
0.1
V
GS
= -10V
SINGLE PULSE
R
θJA
= 270
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
20
Figure 8. Capacitance Characteristics.
SINGLE PULSE
R
θJA
= 270°C/W
T
A
= 25°C
15
10
5
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 270 °C/W
P(pk)
0.01
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN358P Rev G (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
