Typical Electrical Characteristics
10
I
D
, DRAIN-SOURCE CURRENT (A)
1.8
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
= 10V
6.0
5.0
4.5
R
DS(ON)
, NORMALIZED
8
4.0
V
GS
=3.5V
6
4.0
4.5
5.0
6.0
7.0
10
3.5
4
2
3.0
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
1.6
DRAIN-SOURCE ON-RESISTANCE
0.25
I
D
= 1.9A
1.4
I
D
=0.95A
0.2
V
GS
= 4.5V
R
DS(ON)
, NORMALIZED
1.2
0.15
1
0.1
T = 125°C
A
T = 25°C
A
0.8
0.05
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0
2
4
6
8
10
V
GS
,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
14
12
I
D
, DRAIN CURRENT (A)
10
8
6
4
2
0
25°C
125°C
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 10V
T
A
= -55°C
10
V
GS
= 0V
1
TJ = 125°C
25°C
-55°C
0.1
0.01
0.001
1
2
3
4
5
6
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN357N Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
