Typical Electrical And Thermal Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
600
I
D
= 1.9A
8
CAPACITANCE (pF)
V
DS
= 5V
10V
15V
300
200
C
iss
Coss
6
100
4
50
2
20
0.1
f = 1 MHz
V
GS
= 0 V
0.2
0.5
1
2
5
10
C
rss
0
30
0
2
4
Q
g
, GATE CHARGE (nC)
6
8
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
20
10
I
D
, DRAIN CURRENT (A)
5
N)
(O
DS
R
IT
LIM
50
1m
s
10m
40
s
POWER (W)
30
SINGLE PULSE
R
θ
JA
=250° C/W
T
A
= 25°C
1
0.5
100
1s
10s
ms
20
0.1
0.05
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 250°C/W
T
A
= 25°C
A
0.2
0.5
1
2
DC
10
0.01
0.1
0
0.0001
5
10
20
50
0.001
0.01
0.1
1
10
100 300
SINGLE PULSE TIME (SEC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 250 °C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1a.
Transient thermal response will change depending on the circuit board design.
FDN357N Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
