Typical Characteristics
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = -4.0V
VGS = -10V
8
-4.5V
-6.0V
6
-5.0V
-4.5V
-6.0V
4
-7.0V
-4.0V
-8.0V
-10V
2
0
-3.5V
4
-3.0V
0
1
2
3
5
0
2
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
ID = -0.45A
ID = -0.9A
VGS = -10V
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
100
10
1
VGS = 0V
VDS = -5V
TA = -55oC
125oC
TA = 125oC
6
25oC
0.1
25oC
4
0.01
0.001
-55oC
2
0.0001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
2
3
4
5
6
7
8
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
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FDN352AP Rev. C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
