Typical Electrical Characteristics
0.5
I
D
, DRAIN-SOURCE CURRENT (A)
5
3.5V
3.0V
0.3
R
DS(ON)
, NORMALIZED
0.4
DRAIN-SOURCE ON-RESISTANCE
V
GS
=4.5V
4.5
4
3.5
V
GS
= 2.5V
2.7V
3.0V
3.5V
2.7V
2.5V
0.2
3
2.5
2
4.0V
4.5V
5.0V
2.0V
0.1
0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.1
0.2
I
D
, DRAIN CURRENT (A)
0.3
0.4
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
1.8
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
-50
20
R
DS(ON)
, NORMALIZED
V
GS
= 4.5V
R
DS(ON)
, ON-RESISTANCE(OHM)
I
D
= 0.22A
I
D
= 0.10A
16
12
8
T
A
=125°C
4
25°C
0
1
2
3
4
5
V
GS
,GATE TO SOURCE VOLTAGE (V)
-25
0
J
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
0.15
T
J
= -55°C
25°C
125°C
I
S
, REVERSE DRAIN CURRENT (A)
0.2
0.4
V
GS
= 0V
0.1
T
J
= 125°C
0.01
0.1
25°C
-55°C
0.001
0.05
0
0.5
0.0001
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
V , GATE TO SOURCE VOLTAGE (V)
GS
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6301N Rev.E1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
